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楼主 |
发表于 2011-10-21 12:42:19
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A4 1N4150W Si-diode Sw, Fast, 50V, 200mA, <2.5pF(0V), <4ns SOD-323 5d 1a Cen
A4 BAT760 Si-diode Schottky, Sw, U-Fast, 20V, 1A, Vf<0.55V(1A), <0.3ns SOD-323 5d 1a Phi
A4 BZX884-B3V3 Z-diode 3.3V±2%, 250mW SOD-882 13d 2b Phi
A4 FSS15 Si-diode SBR, 50V, 1A, Vf<0.75V(1A) DO-214AC 1d 2j Fag
A4 MM1Z5221B Z-diode 2.28..2.52V, Izt=20mA, Zzt=30Ω, 500mW SOD-323FL 5d 1a Eic
A4 MM1Z5221BH Z-diode 2.28..2.52V, Izt=20mA, Zzt=30Ω, 500mW SOD-123 5d 1a Zow
A4 MMSZ13 Z-diode 13V±5%, Zzt=30Ω, 500mW SOD-123 5d 1a Mot
A4 MMSZ5221B Z-diode 2.4V±5%, Izt=20mA, Zzt=30Ω, 500mW SOD-123 5d 1a Eic
A4 MSCD104 Si-diode SBR, 40V, 1A, Vf<0.5V(1A) 0805 14d 1v Zow
A4 PTVS6V5S1UR TVS Vrwm=6.5V, Vbr=7.22..7.98V, 35.7A, 400W (1ms) SOD-123W 7d 1a Nxp
A4 SM4004SPT Si-diode Rectifer, 400V, 1A SOD-123S 7d 1a Chm
A4 SSCD104 Si-diode SBR, 40V, 1A, Vf<0.5V(1A) 1206 14d 1v Zow |
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